EDEN PRAIRIE, Minn.--March 29, 2005--NVE Corporation (NasdaqSC: NVEC) announced that it has been notified by the U. S. Patent and Trademark Office that the patent titled "Magnetic Field Sensor with Augmented Magnetoresistive Sensing Layer" will be issued today. The patent relates to the use of an effect known as "electron spin exchange-biasing" for low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance (GMR) sensors. The patent is number 6,872,467 and is the grant of the application published by the U. S. Patent and Trademark Office under number 2004-0115478.

SDT and GMR sensors applications include magnetic disk read heads and magnetoresistive random access memory (MRAM). The invention reduces hysteresis, which can cause errors and signal loss.

"This is an important sensor innovation," said NVE Founder and Chief Technology Officer James M. Daughton, Ph.D. "It enables better linear magnetic field sensors and could have wide applications."

Links to the new patent as well as NVE's other U. S. patents can be found at the "company information" section of NVE's website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic products, including sensors and couplers, to revolutionize data sensing and transmission.