NVE Notified of Grant
of Patent Relating to Magnetothermal MRAM
EDEN PRAIRIE, Minn.--April 4, 2006--NVE Corporation (Nasdaq: NVEC)
said today that it has been notified by the U.S. Patent and Trademark
Office of the expected grant of a patent relating to magnetothermal
Magnetoresistive Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Magnetic Memory
Layers Thermal Pulse Transitions," will be issued today. The
patent is number 7,023,723 and is the grant of a patent under the
application published by the U.S. Patent and Trademark Office as
number 2004-0125673. The grant is in addition to patent number 6,963,098
titled "Thermally Operated Switch Control Memory Cell,"
which was granted in November 2005, as well as other NVE patents
relating to MRAM and magnetothermal MRAM.
MRAM is a revolutionary integrated-circuit memory fabricated with
nanotechnology that uses electron spin to store data. MRAM has been
called the ideal memory because it has the potential to combine
the speed of SRAM, the density of DRAM, and the non-volatility of
flash memory.
Magnetothermal MRAM uses a combination of ultra-fast magnetic fields
and heat pulses, both from electrical current, to reduce the energy
required to write data and allow reduction of the memory cell size
while maintaining thermal stability. Thus magnetothermal MRAM has
the potential to enable low power, dense MRAM.
"Magnetothermal MRAM could be the MRAM of the future because
it promises to reduce both cell size and write current," said
NVE President and CEO Daniel A. Baker, Ph.D. "This patent grant
strengthens our magnetothermal MRAM intellectual property portfolio."
The grant will be NVE's thirty-sixth issued U.S. patent. The company
has more than 100 patents worldwide either issued, pending, or licensed
from others. Links to the new patent as well as NVE's other U.S.
patents can be found at the "About NVE" section of the
company's website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics,
a nanotechnology that many experts believe represents the next generation
of microelectronics. NVE licenses its MRAM intellectual property
and sells spintronic sensors and couplers to revolutionize data
sensing and transmission.
Statements used in this press release that relate to future
plans, events, financial results or performance are forward-looking
statements that are subject to certain risks and uncertainties including,
among others, such factors as uncertainties relating to MRAM production
by our licensees, risks in the enforcement of our patents, uncertainties
in the rate of adoption of technology, as well as the risk factors
listed from time to time in our filings with the SEC, including
our Annual Report on Form 10-KSB and other reports filed with the
SEC.
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