NVE Notified of Grant of MRAM Patent
EDEN PRAIRIE, Minn.--December 12, 2006--NVE Corporation (Nasdaq: NVEC)
said that it has been notified by the U.S. Patent and Trademark Office
(USPTO) of the expected grant today of a patent relating to Magnetoresistive
Random Access Memory (MRAM). The patent, titled "Magnetoresistive
Memory SOI Cell," is number 7,148,531 and is the grant of a patent
under the application published by the USPTO as number 2005-0242382.
MRAM is an integrated-circuit memory which is fabricated with nanotechnology,
and which uses electron spin to store data. MRAM may have the potential
to combine many of the best attributes of different types of semiconductor
memories.
NVE's invention relates to MRAM incorporating silicon-on-insulator
(SOI) materials. The invention could allow smaller MRAM cells and
lower power consumption by reducing the electrical current required
to write data to the memory cells.
The grant brings NVE's U.S. patent total to 39. The company has more
than 100 patents worldwide issued, pending, or licensed from others.
Links to the new patent and NVE's other U.S. patents can be found
at the "About NVE" section of the company's Website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics,
a nanotechnology that many experts believe represents the next generation
of microelectronics. NVE licenses its MRAM intellectual property and
sells spintronic products, including sensors and couplers, to revolutionize
data sensing and transmission.
Statements used in this press release that relate to future plans,
events, financial results or performance are forward-looking statements
that are subject to certain risks and uncertainties including, among
others, such factors as uncertainties relating to the grant of patents
in the future, risks in the enforcement of our patents, as well as
the risk factors listed from time to time in our filings with the
SEC, including our Annual Report on Form 10-K and other reports filed
with the SEC.
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