Press Release December 12, 2006
NVE Notified of Grant of MRAM Patent

EDEN PRAIRIE, Minn.--December 12, 2006--NVE Corporation (Nasdaq: NVEC) said that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant today of a patent relating to Magnetoresistive Random Access Memory (MRAM). The patent, titled "Magnetoresistive Memory SOI Cell," is number 7,148,531 and is the grant of a patent under the application published by the USPTO as number 2005-0242382.

MRAM is an integrated-circuit memory which is fabricated with nanotechnology, and which uses electron spin to store data. MRAM may have the potential to combine many of the best attributes of different types of semiconductor memories.

NVE's invention relates to MRAM incorporating silicon-on-insulator (SOI) materials. The invention could allow smaller MRAM cells and lower power consumption by reducing the electrical current required to write data to the memory cells.

The grant brings NVE's U.S. patent total to 39. The company has more than 100 patents worldwide issued, pending, or licensed from others. Links to the new patent and NVE's other U.S. patents can be found at the "About NVE" section of the company's Website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic products, including sensors and couplers, to revolutionize data sensing and transmission.

Statements used in this press release that relate to future plans, events, financial results or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to the grant of patents in the future, risks in the enforcement of our patents, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC.

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