NVE Notified of Grant of Magnetothermal
MRAM Patent
EDEN PRAIRIE, Minn.September 4, 2007NVE Corporation (Nasdaq: NVEC)
announced today that it has been notified by the U.S. Patent and Trademark Office
(USPTO) of the expected grant of a patent relating to magnetothermal Magnetoresistive
Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Magnetic Memory Layers
Thermal Pulse Transitions," will issue today. The patent is number 7,266,013
and covers inventions by Dr. James M. Daughton and Dr. Arthur V. Pohm. The grant
is in addition to similarly-titled patent numbers 7,177,178 and 7,023,723.
MRAM is an integrated-circuit memory which is fabricated with nanotechnology
and which uses electron spin to store data. MRAM may have the potential to combine
many of the best attributes of different types of semiconductor memories.
Magnetothermal MRAM is a next-generation MRAM technology that uses a combination
of ultra-fast magnetic fields and heat pulses, both from electrical current, to
reduce the energy required to write data and allow reduction of the memory cell
size while maintaining thermal stability.
Magnetothermal MRAM may have the potential to increase MRAM density, increase
speed, and reduce power, all of which could enable broader MRAM use in the future.
The grant brings NVE's U.S. patent total to 45. The company has more than 100
patents worldwide issued, pending, or licensed from others. Links to the new patent
and NVE's other U.S. patents can be found at the "About NVE" section
of the company's Website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that many experts believe represents the next generation of microelectronics.
NVE licenses its MRAM intellectual property and sells spintronic products, including
sensors and couplers, to revolutionize data sensing and transmission.
Statements used in this press release that relate to future plans, events,
financial results or performance are forward-looking statements that are subject
to certain risks and uncertainties including, among others, such factors as uncertainties
relating to the grant of patents in the future, risks in the enforcement of our
patents, uncertainties in the introduction of MRAM, as well as the risk factors
listed from time to time in our filings with the SEC, including our Annual Report
on Form 10-K and other reports filed with the SEC.
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