INFORMATION BULLETIN

May 11, 2010—NVE Corporation today was granted patent number 7,715,228, titled “Cross-Point Magnetoresistive Memory,” relating to Magnetoresistive Random Access Memory (MRAM).

MRAM is an integrated-circuit memory which is fabricated with nanotechnology and which uses electron spin to store data. MRAM may have the potential to combine many of the best attributes of different types of semiconductor memories.

The invention was made with U.S. Government support under a Missile Defense Agency contract and assigned to NVE. The U.S. Government has certain rights in the invention.

NVE has more than 50 U.S. patents, and more than 100 patents worldwide issued, pending, or licensed from others. Links to the new patent and NVE’s other U.S. patents can be found on the Patents page of the company’s Website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

Statements used in this bulletin that relate to future plans, events, financial results or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to the grant of patents in the future, risks in the enforcement of our patents, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC. The company undertakes no obligation to update forward-looking statements in this bulletin.