NVE Corporation PRODUCT ANNOUNCEMENT


NVE Introduces New Angle Sensor
AAT003-10E Provides Large Signal and Low Impedance Without Amplification

EDEN PRAIRIE, Minn.—January 29, 2014—NVE Corporation (Nasdaq: NVEC) today announced the introduction of the AAT003-10E Tunneling Magnetoresistance (TMR) Angle Sensor, a high-output magnetic sensor element for position measurements when a rotating magnetic field is applied.
 
The new part has the same best-in-class accuracy as the groundbreaking AT001-10E, but with lower bridge resistance for a low-noise interface to signal-processing circuitry while still maintaining low power operation.

Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling Magnetoresistance is a spintronic quantum effect that produces a dramatic resistance change in a normally insulating layer, depending on the magnetic field and thus the predominant electron spin in a free layer. The device has four TMR elements configured as an angle sensor with full quadrature sine and cosine outputs.

AAT-Series Operation

Key AAT003 features include:
  • 0.5 degrees maximum angular measurement error
  • Large output signal without amplification
  • 40 kilohms nominal bridge resistance
  • Wide airgap tolerance
  • Sine and cosine outputs for direction detection
  • Ultraminiature 2.5 mm x 2.5 mm x 0.8 mm TDFN6

AAT-Series Sensor outputs are proportional to the supply voltage and peak-to-peak output voltages are much larger than other sensor technologies. Typical applications include rotary encoders and motor shaft position sensors.

The other member of the AAT Angle Sensor family, the AAT001, has 1.25 megohm nominal bridge resistance for microwatt power consumption and is ideal for battery applications.

Available now, AAT003-10E Angle Sensors are priced at $1.94 each in 1,000-piece quantities. Datasheets and more information are available at www.nve.com.

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

Statements used in this announcement that relate to future plans, events, or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC.

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